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    Single exposure high dynamic range (HDR) analog front-end for CMOS image sensors
    1.
    发明授权
    Single exposure high dynamic range (HDR) analog front-end for CMOS image sensors 有权

    公开(公告)号：US12219276B2

    公开(公告)日：2025-02-04

    申请号：US17695172

    申请日：2022-03-15

    Applicant: Sony Semiconductor Solutions Corporation

    Inventor： Eric Bohannon

    IPC: H04N25/57 ,  H04N25/76

    Abstract: A single exposure high dynamic range (HDR) analog front-end (AFE) for complementary metal-oxide-semiconductor (CMOS) image sensors. In one embodiment, a single exposure HDR AFE includes input signal circuitry, gain stage circuitry, a continuous-time filter, comparator circuitry, and counter circuitry. The input signal circuitry is configured to generate an input signal. The gain stage circuitry including two gain stages and one gain stage is configured to generate a high gain output signal based on the input signal. The continuous-time filter is configured to generate a filtered high gain output signal by filtering the high gain output signal. The comparator circuitry is configured to generate a high gain comparison signal by comparing the filtered high gain output signal to the ramp voltage. The counter circuitry is configured to generate a high gain digital output signal based on the high gain comparison signal and using the clock signal.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    2.
    发明申请
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20240430598A1

    公开(公告)日：2024-12-26

    申请号：US18741222

    申请日：2024-06-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Soonik CHO ,  Jahyun KOO ,  Dahsom KIM ,  Donghoon SUNG ,  Seokyong HONG

    IPC: H04N25/78 ,  H03M1/56 ,  H04N25/51 ,  H04N25/57

    Abstract: An image sensor includes a pixel array, a ramp signal generating circuit configured to output a first reference ramp signal of a first slope as a first ramp signal in a first period and a second reference ramp signal of a second slope as the first ramp signal in a second period, an offset voltage sampling circuit configured to, to sample an offset voltage based on a DC level of the first reference ramp signal, to output the first ramp signal in the first period, and to output a signal obtained by adding the offset voltage to the first ramp signal as a second ramp signal in the second period, a buffer configured to buffer the first ramp signal and the second ramp signal, and an ADC circuit configured to compare a pixel signal from the pixel array with the first ramp signal or the second ramp signal.

    Solid-state imaging device and imaging device
    4.
    发明授权
    Solid-state imaging device and imaging device 有权

    公开(公告)号：US12143735B2

    公开(公告)日：2024-11-12

    申请号：US17928129

    申请日：2021-04-26

    Applicant: Sony Semiconductor Solutions Corporation

    Inventor： Takuya Maruyama ,  Tsutomu Imoto ,  Atsumi Niwa

    IPC: H04N25/47 ,  H01L27/146 ,  H04N25/42 ,  H04N25/46 ,  H04N25/57 ,  H04N25/703 ,  H04N25/707 ,  H04N25/76 ,  H04N25/77 ,  H04N25/78

    Abstract: Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes detection pixels that each output a luminance change of incident light, a detection circuit that outputs an event signal based on the luminance change, and a first common line connecting the detection pixels to each other. Each of the detection pixels may include a photoelectric conversion element, a logarithmic conversion circuit that outputs a voltage signal corresponding to a logarithmic value of photocurrent from the photoelectric conversion element, a first circuit that outputs a luminance change of incident light based on the voltage signal, a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit, and a second transistor connected between the photoelectric conversion element and the first common line. The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.

    Solid-state imaging device, imaging method, and electronic apparatus
    7.
    发明授权
    Solid-state imaging device, imaging method, and electronic apparatus 有权

    公开(公告)号：US12088936B2

    公开(公告)日：2024-09-10

    申请号：US18003417

    申请日：2021-06-28

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： Terukazu Tanaka ,  Atsumi Niwa

    IPC: H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778

    CPC classification number: H04N25/57 ,  H03G3/30 ,  H04N25/51 ,  H04N25/778 ,  H03G2201/103

    Abstract: An imaging device includes pixel circuit including a generation unit generating a voltage; a capacitor having a first electrode to which the voltage is applied; a first amplifier having a first input terminal, connected to a second electrode of the capacitor, and a second input terminal, to which a first reference voltage is applied to, to output a result by comparing the voltage with the first reference voltage; a switch unit controlling a connection between the output of the first amplifier and the first input terminal; and a second amplifier having a third input terminal, to which the output of the first amplifier is connected, and a fourth input terminal, to which a second reference voltage is applied, to output a result by comparing the voltage with the second reference voltage, in which a first gain of the first amplifier is lower than a second gain of the second amplifier.

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