Invention Grant
- Patent Title: Magnetoresistive memory device and manufacturing method thereof
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Application No.: US17871983Application Date: 2022-07-25
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Publication No.: US11749328B2Publication Date: 2023-09-05
- Inventor: Zong-You Luo , Ya-Jui Tsou , Chee-Wee Liu , Shao-Yu Lin , Liang-Chor Chung , Chih-Lin Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Maschoff Brennan
- The original application number of the division: US16572329 2019.09.16
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/10 ; H01L43/02 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.
Public/Granted literature
- US20220358980A1 MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-11-10
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