Invention Grant
- Patent Title: Thermally conductive material in the recess of an encapsulant and sidewall of an integrated circuit device
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Application No.: US17815410Application Date: 2022-07-27
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Publication No.: US11756802B2Publication Date: 2023-09-12
- Inventor: Jing-Cheng Lin , Li-Hui Cheng , Po-Hao Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/48 ; H01L21/683 ; H01L23/367 ; H01L23/31 ; H01L23/373 ; H01L23/42 ; H01L23/538 ; H01L23/00 ; H01L25/11 ; H01L25/00
Abstract:
A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.
Public/Granted literature
- US20220367212A1 Underfill Between a First Package and a Second Package Public/Granted day:2022-11-17
Information query
IPC分类:
