Invention Grant
- Patent Title: Metal oxide film and semiconductor device
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Application No.: US17370221Application Date: 2021-07-08
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Publication No.: US11757007B2Publication Date: 2023-09-12
- Inventor: Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP 15257710 2015.12.29 JP 16125478 2016.06.24
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L29/778 ; H01L29/786 ; H01L27/12 ; C03C17/245 ; C04B35/01 ; C04B35/453 ; C04B35/622 ; C23C14/08 ; C23C14/58

Abstract:
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Public/Granted literature
- US20210343843A1 Metal Oxide Film and Semiconductor Device Public/Granted day:2021-11-04
Information query
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