Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17830376Application Date: 2022-06-02
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Publication No.: US11757041B2Publication Date: 2023-09-12
- Inventor: Shunpei Yamazaki , Junichi Koezuka , Masami Jintyou , Yukinori Shima , Takashi Hamochi , Yasutaka Nakazawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: NIXON PEABODY LLP
- Agent Jeffrey L. Costellia
- Priority: JP 13271783 2013.12.27
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/10 ; H01L29/45 ; G02F1/1333 ; G02F1/1335 ; G02F1/1339 ; G02F1/1368 ; H10K59/121
Abstract:
A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.
Public/Granted literature
- US20220293795A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-15
Information query
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