- 专利标题: Abnormal power supply voltage detection device and method for detecting abnormal power supply voltage
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申请号: US17559091申请日: 2021-12-22
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公开(公告)号: US11762034B2公开(公告)日: 2023-09-19
- 发明人: Tadashi Kameyama , Masanori Ikeda , Masataka Minami , Kenichi Shimada , Yukitoshi Tsuboi
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 主分类号: G01R31/40
- IPC分类号: G01R31/40
摘要:
The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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