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公开(公告)号：US11573134B2
公开(公告)日：2023-02-07
申请号：US16687308
申请日：2019-11-18
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda
Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.
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Patent Agency Ranking
公开(公告)号：US11604102B2
公开(公告)日：2023-03-14
申请号：US17232902
申请日：2021-04-16
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Masanori Ikeda , Tadashi Kameyama
IPC: G01K13/00 , G01K7/01 , G01K15/00 , G01R21/133
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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公开(公告)号：US11243264B2
公开(公告)日：2022-02-08
申请号：US16855814
申请日：2020-04-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda , Masataka Minami , Kenichi Shimada , Yukitoshi Tsuboi
IPC: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US11009407B2
公开(公告)日：2021-05-18
申请号：US16519496
申请日：2019-07-23
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Masanori Ikeda , Tadashi Kameyama
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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公开(公告)号：US11762034B2
公开(公告)日：2023-09-19
申请号：US17559091
申请日：2021-12-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda , Masataka Minami , Kenichi Shimada , Yukitoshi Tsuboi
IPC: G01R31/40
CPC classification number: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US10408687B2
公开(公告)日：2019-09-10
申请号：US15473979
申请日：2017-03-30
Applicant: Renesas Electronics Corporation
Inventor： Masanori Ikeda , Tadashi Kameyama
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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