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公开(公告)号：US11573134B2
公开(公告)日：2023-02-07
申请号：US16687308
申请日：2019-11-18
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda
Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.
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公开(公告)号：US09647654B2
公开(公告)日：2017-05-09
申请号：US14851592
申请日：2015-09-11
Applicant: Renesas Electronics Corporation
Inventor： Tadashi Kameyama , Takanobu Naruse , Yohei Akita , Hirotaka Hara
Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.
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公开(公告)号：US11762034B2
公开(公告)日：2023-09-19
申请号：US17559091
申请日：2021-12-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda , Masataka Minami , Kenichi Shimada , Yukitoshi Tsuboi
IPC: G01R31/40
CPC classification number: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US10408687B2
公开(公告)日：2019-09-10
申请号：US15473979
申请日：2017-03-30
Applicant: Renesas Electronics Corporation
Inventor： Masanori Ikeda , Tadashi Kameyama
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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Patent Agency Ranking
公开(公告)号：US12278198B2
公开(公告)日：2025-04-15
申请号：US17743033
申请日：2022-05-12
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Yoshikazu Tanaka , Tadashi Kameyama , Takafumi Betsui
Abstract: A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board. The wiring board includes a first and a second signal transmission line and a reference potential plane. The first and the second signal transmission line is formed in a first conductive layer and connected to the differential signal terminal pair. The reference potential plane includes a conductive pattern formed in a different conductive layer from the first conductive layer. The conductive pattern includes a first and a second region overlapped with the first and the second signal transmission line in plan view, respectively. The conductive pattern has a plurality of openings in the first and the second region. An area of a first conductive portion of the reference potential plane in the first region becomes equal to an area of a second conductive portion of the reference potential plane in the second region.
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公开(公告)号：US11243264B2
公开(公告)日：2022-02-08
申请号：US16855814
申请日：2020-04-22
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tadashi Kameyama , Masanori Ikeda , Masataka Minami , Kenichi Shimada , Yukitoshi Tsuboi
IPC: G01R31/40
Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.
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公开(公告)号：US11009407B2
公开(公告)日：2021-05-18
申请号：US16519496
申请日：2019-07-23
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Masanori Ikeda , Tadashi Kameyama
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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公开(公告)号：US11604102B2
公开(公告)日：2023-03-14
申请号：US17232902
申请日：2021-04-16
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Masanori Ikeda , Tadashi Kameyama
IPC: G01K13/00 , G01K7/01 , G01K15/00 , G01R21/133
Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
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9.发明申请Monitor Circuit, Semiconductor Integrated Circuit, Semiconductor Device, and Method of Controlling Power Supply Voltage of Semiconductor Device 有权监控电路，半导体集成电路，半导体器件和控制半导体器件电源电压的方法公开(公告)号：US20160006424A1
公开(公告)日：2016-01-07
申请号：US14851592
申请日：2015-09-11
Applicant: Renesas Electronics Corporation
Inventor： Tadashi Kameyama , Takanobu Naruse , Yohei Akita , Hirotaka Hara
Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.
Abstract translation: 监视电路包括产生第一和第二参考电压的参考电压产生单元，放大第一参考电压和第二参考电压之间的差分电压的第一放大器单元，放大内部功率之间的差分电压的第二放大器单元 电源电压被提供给设置在半导体集成电路中的功能块和第一参考电压，以及比较器单元，其将第一放大器单元的放大结果与第二放大器单元的放大结果进行比较，并将比较结果输出为 测量结果。
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