Invention Grant
- Patent Title: Fabricating method of reducing photoresist footing
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Application No.: US17316736Application Date: 2021-05-11
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Publication No.: US11762293B2Publication Date: 2023-09-19
- Inventor: Hao-Hsuan Chang , Da-Jun Lin , Yao-Hsien Chung , Ting-An Chien , Bin-Siang Tsai , Chih-Wei Chang , Shih-Wei Su , Hsu Ting , Sung-Yuan Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G03F7/075
- IPC: G03F7/075 ; G03F7/20 ; C23C16/34

Abstract:
A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.
Public/Granted literature
- US20220365433A1 FABRICATING METHOD OF REDUCING PHOTORESIST FOOTING Public/Granted day:2022-11-17
Information query
IPC分类: