A current operating characteristic value of a unit of the memory device is identified. An operating characteristic threshold value is identified from a set of operating characteristic thresholds, where the current operating characteristic value satisfies an operating characteristic threshold criterion that is based on the operating characteristic threshold value. A set of write-to-read (W2R) delay time thresholds that corresponds to the operating characteristic threshold value is identified from a plurality of sets of W2R delay time thresholds. Each of the W2R delay time thresholds in the set is associated with a corresponding read voltage level. A W2R delay time threshold associated with a W2R delay time threshold criterion is identified from the set of W2R delay time thresholds, where the W2R threshold criterion is satisfied by a current W2R delay time of the memory sub-system. A read voltage level associated with the identified W2R delay time threshold is identified.