Invention Grant
- Patent Title: Method of forming a dummy fin between first and second semiconductor fins
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Application No.: US17567476Application Date: 2022-01-03
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Publication No.: US11764222B2Publication Date: 2023-09-19
- Inventor: Shih-Yao Lin , Yun-Ting Chou , Chih-Han Lin , Jr-Jung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/092 ; H01L21/8238 ; H01L29/08 ; H01L29/66
Abstract:
An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
Public/Granted literature
- US20220122972A1 Dummy Fins and Methods of Forming Thereof Public/Granted day:2022-04-21
Information query
IPC分类:
