Invention Grant
- Patent Title: System and method for performing extreme ultraviolet photolithography processes
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Application No.: US17867318Application Date: 2022-07-18
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Publication No.: US11768437B2Publication Date: 2023-09-26
- Inventor: Tai-Yu Chen , Sagar Deepak Khivsara , Kuo-An Liu , Chieh Hsieh , Shang-Chieh Chien , Gwan-Sin Chang , Kai Tak Lam , Li-Jui Chen , Heng-Hsin Liu , Chung-Wei Wu , Zhiqiang Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: SEED IP LAW GROUP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/00
Abstract:
A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.
Public/Granted literature
- US20220350257A1 SYSTEM AND METHOD FOR PERFORMING EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY PROCESSES Public/Granted day:2022-11-03
Information query
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