公开(公告)号：US12207381B2

公开(公告)日：2025-01-21

申请号：US17712373

申请日：2022-04-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu Chen ,  Shang-Chieh Chien ,  Li-Jui Chen

IPC: H05G2/00 ,  G03F7/00

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.

公开(公告)号：US12063734B2

公开(公告)日：2024-08-13

申请号：US17483298

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Sun ,  Ming-Hsun Tsai ,  Wei-Shin Cheng ,  Cheng-Hao Lai ,  Hsin-Feng Chen ,  Chiao-Hua Cheng ,  Cheng-Hsuan Wu ,  Yu-Fa Lo ,  Jou-Hsuan Lu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: H05G2/00 ,  G03F7/00 ,  G05D23/19

CPC classification number: H05G2/006 ,  G03F7/70033 ,  G05D23/19 ,  H05G2/005

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

公开(公告)号：US12007694B2

公开(公告)日：2024-06-11

申请号：US17691647

申请日：2022-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chun Yen ,  Chi Yang ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00 ,  H05G2/00

CPC classification number: G03F7/70033 ,  G03F7/70891 ,  H05G2/005 ,  H05G2/008

Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

公开(公告)号：US20230375940A1

公开(公告)日：2023-11-23

申请号：US17747939

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Hung-Wen Cho ,  Wei-Shin Cheng ,  Ming-Hsun Tsai ,  Jyun-Yan Chuang ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/702 ,  H01L21/027

Abstract: A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.

公开(公告)号：US11092555B2

公开(公告)日：2021-08-17

申请号：US16933067

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/88 ,  G01N21/954 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US11071191B2

公开(公告)日：2021-07-20

申请号：US16899825

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  B08B5/02 ,  B01D46/10 ,  G03F7/20 ,  H01L21/027

Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.

公开(公告)号：US10993308B2

公开(公告)日：2021-04-27

申请号：US16671347

申请日：2019-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Hsieh ,  Shang-Chieh Chien ,  Chun-Chia Hsu ,  Bo-Tsun Liu ,  Tzung-Chi Fu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

公开(公告)号：US20210068241A1

公开(公告)日：2021-03-04

申请号：US17098081

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia Hsu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu

IPC: H05G2/00

Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.

公开(公告)号：US10802406B2

公开(公告)日：2020-10-13

申请号：US16535003

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh Hsieh ,  Kuan-Hung Chen ,  Chun-Chia Hsu ,  Shang-Chieh Chien ,  Liu Bo-Tsun ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  G06F30/39

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US10791616B1

公开(公告)日：2020-09-29

申请号：US16365905

申请日：2019-03-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu Chen ,  Chi Yang ,  Che-Chang Hsu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F1/58 ,  G03F7/20 ,  G03F1/24

Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.