Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17447594Application Date: 2021-09-14
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Publication No.: US11776632B2Publication Date: 2023-10-03
- Inventor: Reika Tanaka , Masumi Saitoh
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 21048564 2021.03.23
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/14 ; G11C16/10 ; G11C5/06 ; G11C16/30

Abstract:
A semiconductor memory device includes a semiconductor layer, a gate electrode, a gate insulating film disposed therebetween, first and second wirings connected to the semiconductor layer, and a third wiring connected to the gate electrode and is configured to execute a write operation, an erase operation, and a read operation. In the write operation, a write voltage of a first polarity is supplied between the third wiring and at least one of the first wiring or the second wiring. In the erase operation, an erase voltage of a second polarity is supplied between the third wiring and at least one of the first wiring or the second wiring. In the read operation, the write voltage or a voltage having a larger amplitude than that of the write voltage is supplied between the third wiring and at least one of the first wiring or the second wiring.
Public/Granted literature
- US20220310170A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-09-29
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