Invention Grant
- Patent Title: Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same
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Application No.: US17818822Application Date: 2022-08-10
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Publication No.: US11784176B2Publication Date: 2023-10-10
- Inventor: Willibrordus Gerardus Maria Van Den Hoek , Tsun Yin Lau , Cameron Danesh , Fariba Danesh
- Applicant: NANOSYS, INC.
- Applicant Address: US CA Milpitas
- Assignee: NANOSYS, INC.
- Current Assignee: NANOSYS, INC.
- Current Assignee Address: US CA Milpitas
- Agency: THE MARBURY LAW GROUP PLLC
- The original application number of the division: US16884523 2020.05.27
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L33/40 ; H01L33/62 ; H01L33/56 ; H01L33/12 ; H01L33/06 ; H01L33/32 ; H01L33/24 ; H01L33/08 ; H01L33/00
Abstract:
A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.
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Information query
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