Invention Grant
- Patent Title: Enhanced trench isolation structure
-
Application No.: US17073553Application Date: 2020-10-19
-
Publication No.: US11784204B2Publication Date: 2023-10-10
- Inventor: Min-Ying Tsai , Cheng-Te Lee , Rei-Lin Chu , Ching I Li , Chung-Yi Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surface of the substrate that define the trench. The first isolation layer comprises a first dielectric material. A second isolation layer is over the first isolation layer. The second isolation layer lines the first isolation layer. The second isolation layer comprises a second dielectric material. A third isolation layer is over the second isolation layer. The third isolation layer fills the trench and lines the second isolation layer. The third isolation layer comprises a third material. A ratio of a first thickness of the first isolation layer to a second thickness of the second isolation layer is about 0.17 to 0.38.
Public/Granted literature
- US20220123031A1 ENHANCED TRENCH ISOLATION STRUCTURE Public/Granted day:2022-04-21
Information query
IPC分类: