- 专利标题： Redundant array of independent NAND for a three-dimensional memory array
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申请号： US17167254申请日： 2021-02-04
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公开(公告)号： US11797383B2公开(公告)日： 2023-10-24
- 发明人: Jung Sheng Hoei , Sampath K. Ratnam , Renato C. Padilla , Kishore K. Muchherla , Sivagnanam Parthasarathy , Peter Feeley
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： G06F11/10
- IPC分类号： G06F11/10 ; G06F3/06 ; G11C11/56 ; G11C16/04 ; G11C29/00 ; H10B43/27 ; G11C29/52
摘要：
The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.
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