Invention Grant
- Patent Title: Semiconductor chip
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Application No.: US17551548Application Date: 2021-12-15
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Publication No.: US11798906B2Publication Date: 2023-10-24
- Inventor: Jeong-gi Jin , Nae-in Lee , Jum-yong Park , Jin-ho Chun , Seong-min Son , Ho-Jin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20160151306 2016.11.14
- The original application number of the division: US16668146 2019.10.30
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L25/10 ; H01L25/065

Abstract:
A semiconductor chip includes a semiconductor substrate including a bump region and a non-bump region, a bump on the bump region, and a passivation layer on the bump region and the non-bump region of the semiconductor substrate. No bump is on the non-bump region. A thickness of the passivation layer in the bump region is thicker than a thickness of the passivation layer in the non-bump region. The passivation layer includes a step between the bump region and the non-bump region.
Public/Granted literature
- US20220108962A1 SEMICONDUCTOR CHIP Public/Granted day:2022-04-07
Information query
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