- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US17394424申请日： 2021-08-05
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公开(公告)号： US11818960B2公开(公告)日： 2023-11-14
- 发明人: Da-Jun Lin , Tai-Cheng Hou , Bin-Siang Tsai , Ting-An Chien
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： TW 8128913 2019.08.14
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L27/22 ; H01L43/02 ; H10N50/01 ; H10B61/00 ; H10N50/80
摘要：
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a top electrode on the MTJ, a trapping layer in the top electrode for trapping hydrogen, a first inter-metal dielectric (IMD) layer on the MTJ, and a first metal interconnection in the first IMD layer and on the top electrode. Preferably, a top surface of the trapping layer is lower than a bottom surface of the first IMD layer.
公开/授权文献
- US20210367147A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2021-11-25
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