- 专利标题： Magneto-electric low power analogue magnetic tunnel junction memory
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申请号： US17510436申请日： 2021-10-26
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公开(公告)号： US11823724B2公开(公告)日： 2023-11-21
- 发明人: Saba Zare , Dimitri Houssameddine , Karthik Yogendra , Heng Wu
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt & Kammer PLLC
- 代理商 Daniel Morris
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H10B61/00 ; H10N50/80 ; H10N50/01 ; H10N50/85 ; H10N50/10
摘要：
A device includes a Magnetic Tunnel Junction (MTJ) memory element comprising, a reference layer, a free layer, and a magnetic tunneling layer between the reference layer and the free layer; and a pair of magneto-electric controlling layers, which have in-plane uniaxial anisotropy, wherein the pair of magneto-electric controlling layers are disposed below the free layer.
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