- 专利标题: Deposition apparatus, deposition target structure, and method
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申请号: US17461742申请日: 2021-08-30
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公开(公告)号: US11823878B2公开(公告)日: 2023-11-21
- 发明人: Chia-Hsi Wang , Yen-Yu Chen
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Seed IP Law Group LLP
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01J37/34 ; H01L21/033
摘要:
A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.
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