- 专利标题： Method of manufacturing a semiconductor device
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申请号： US17114082申请日： 2020-12-07
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公开(公告)号： US11848240B2公开(公告)日： 2023-12-19
- 发明人: Shu-Uei Jang , Chen-Huang Huang , Ryan Chia-Jen Chen , Shiang-Bau Wang , Shu-Yuan Ku
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L21/033 ; H01L21/308 ; H01L21/762 ; H01L27/088 ; H01L29/78
摘要：
A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.
公开/授权文献
- US20210090958A1 Method of Manufacturing a Semiconductor Device 公开/授权日：2021-03-25
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