Invention Grant
- Patent Title: Semiconductor device structure with interconnect structure and method for forming the same
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Application No.: US17869560Application Date: 2022-07-20
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Publication No.: US11854872B2Publication Date: 2023-12-26
- Inventor: Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L21/02
Abstract:
A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
Public/Granted literature
- US20220367257A1 Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same Public/Granted day:2022-11-17
Information query
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