公开(公告)号：US11964358B2

公开(公告)日：2024-04-23

申请号：US17206628

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC classification number: B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US11446785B2

公开(公告)日：2022-09-20

申请号：US16584874

申请日：2019-09-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Chieh Chang ,  Yen-Ting Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B53/017 ,  B24B37/20

Abstract: Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

公开(公告)号：US12249542B2

公开(公告)日：2025-03-11

申请号：US18512682

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US20240339326A1

公开(公告)日：2024-10-10

申请号：US18297946

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-I Chen ,  Pei-Keng Tsai ,  Hui-Chi Huang

IPC: H01L21/304 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/304 ,  H01L21/67051 ,  H01L21/67288 ,  H01L21/68714

Abstract: A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

公开(公告)号：US20240217054A1

公开(公告)日：2024-07-04

申请号：US18610375

申请日：2024-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC classification number: B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US20240087951A1

公开(公告)日：2024-03-14

申请号：US18512682

申请日：2023-11-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76877 ,  H01L29/66795

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US11854827B2

公开(公告)日：2023-12-26

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08 ,  C09K3/14 ,  B01F33/452

CPC classification number: H01L21/3212 ,  B01F33/452 ,  B24B37/04 ,  B24B57/02 ,  C09K3/1427

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US11850704B2

公开(公告)日：2023-12-26

申请号：US17877320

申请日：2022-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chieh Chang ,  Yen-Ting Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B53/017 ,  B24B37/20

CPC classification number: B24B53/017 ,  B24B37/20

Abstract: Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

公开(公告)号：US20210327720A1

公开(公告)日：2021-10-21

申请号：US17364313

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.

Inventor： Yen-Ting Chen ,  Chun-Hao Kung ,  Tung-Kai Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09K3/14 ,  B24B57/02 ,  B24B37/04 ,  B01F13/08

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

公开(公告)号：US10947414B2

公开(公告)日：2021-03-16

申请号：US16503255

申请日：2019-07-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-I Chih ,  Chih-Chieh Chang ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: C09G1/02 ,  B24B37/20 ,  C09G1/04 ,  H01L21/306 ,  H01L21/321

Abstract: A polishing composition for a chemical mechanical polishing process includes abrasive particles, at least one chemical additive, and a non-aqueous solvent.