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公开(公告)号:US11964358B2
公开(公告)日:2024-04-23
申请号:US17206628
申请日:2021-03-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Yu Wang , Chun-Hao Kung , Ching-Hsiang Tsai , Kei-Wei Chen , Hui-Chi Huang
IPC: B24B37/10 , B24B37/04 , B24B49/00 , H01L21/306
CPC classification number: B24B37/107 , B24B37/042 , B24B49/00 , H01L21/30625
Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.
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公开(公告)号:US20230219188A1
公开(公告)日:2023-07-13
申请号:US18174125
申请日:2023-02-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Shang-Yu Wang , Ching-Hsiang Tsai , Hui-Chi Huang , Kei-Wei Chen
IPC: B24B37/10 , B24B37/04 , H01L21/3105 , B24B37/32 , H01L21/321 , H01L21/768
CPC classification number: B24B37/105 , B24B37/042 , H01L21/31053 , B24B37/32 , H01L21/3212 , H01L21/7684
Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.
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公开(公告)号:US11145751B2
公开(公告)日:2021-10-12
申请号:US15939389
申请日:2018-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kuo-Ju Chen , Su-Hao Liu , Chun-Hao Kung , Liang-Yin Chen , Huicheng Chang , Kei-Wei Chen , Hui-Chi Huang , Kao-Feng Liao , Chih-Hung Chen , Jie-Huang Huang , Lun-Kuang Tan , Wei-Ming You
IPC: H01L29/66 , H01L29/417 , H01L29/78
Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.
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公开(公告)号:US20210205950A1
公开(公告)日:2021-07-08
申请号:US17206628
申请日:2021-03-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Yu Wang , Chun-Hao Kung , Ching-Hsiang Tsai , Kei-Wei Chen , Hui-Chi Huang
IPC: B24B37/10 , H01L21/306 , B24B37/04
Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.
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公开(公告)号:US20200039022A1
公开(公告)日:2020-02-06
申请号:US16513664
申请日:2019-07-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Hui-Chi Huang , Kei-Wei Chen , Yen-Ting Chen
IPC: B24B37/24 , H01L21/306
Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.
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公开(公告)号:US12036636B2
公开(公告)日:2024-07-16
申请号:US18174125
申请日:2023-02-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Shang-Yu Wang , Ching-Hsiang Tsai , Hui-Chi Huang , Kei-Wei Chen
IPC: B24B37/10 , B24B37/04 , B24B37/32 , H01L21/3105 , H01L21/321 , H01L21/768
CPC classification number: B24B37/105 , B24B37/042 , B24B37/32 , H01L21/31053 , H01L21/3212 , H01L21/7684
Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.
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公开(公告)号:US11854872B2
公开(公告)日:2023-12-26
申请号:US17869560
申请日:2022-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768 , H01L29/66 , H01L21/02
CPC classification number: H01L21/76831 , H01L21/7684 , H01L21/76814 , H01L21/76877 , H01L21/02211 , H01L21/76843 , H01L29/66795
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
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公开(公告)号:US11551936B2
公开(公告)日:2023-01-10
申请号:US16513664
申请日:2019-07-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Hui-Chi Huang , Kei-Wei Chen , Yen-Ting Chen
IPC: H01L21/306 , B24B37/24 , H01L21/321
Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.
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公开(公告)号:US20240395562A1
公开(公告)日:2024-11-28
申请号:US18790908
申请日:2024-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Tung-Kai Chen , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , C09G1/02 , C09G1/04 , H01L21/306 , H01L21/768
Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.
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公开(公告)号:US12087590B2
公开(公告)日:2024-09-10
申请号:US18066934
申请日:2022-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Kung , Hui-Chi Huang , Kei-Wei Chen , Yen-Ting Chen
IPC: H01L21/306 , B24B37/24 , H01L21/321
CPC classification number: H01L21/30625 , B24B37/24 , H01L21/3212
Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.
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