Invention Grant
- Patent Title: Fan-out package with cavity substrate
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Application No.: US17808621Application Date: 2022-06-24
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Publication No.: US11855059B2Publication Date: 2023-12-26
- Inventor: Po-Hao Tsai , Techi Wong , Po-Yao Chuang , Shin-Puu Jeng , Meng-Wei Chou , Meng-Liang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H01L23/31 ; H01L21/56

Abstract:
Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
Public/Granted literature
- US20220344317A1 Fan-Out Package with Cavity Substrate Public/Granted day:2022-10-27
Information query
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