Invention Grant
- Patent Title: Integrated circuit package and method of forming thereof
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Application No.: US17361924Application Date: 2021-06-29
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Publication No.: US11862590B2Publication Date: 2024-01-02
- Inventor: Hsien-Wei Chen , Ming-Fa Chen , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/18 ; H01L21/56 ; H01L25/00

Abstract:
A semiconductor package includes a redistribution structure, a first device and a second device attached to the redistribution structure, the first device including: a first die, a support substrate bonded to a first surface of the first die, and a second die bonded to a second surface of the first die opposite the first surface, where a total height of the first die and the second die is less than a first height of the second device, and where a top surface of the substrate is at least as high as a top surface of the second device, and an encapsulant over the redistribution structure and surrounding the first device and the second device.
Public/Granted literature
- US20220336393A1 INTEGRATED CIRCUIT PACKAGE AND METHOD OF FORMING THEREOF Public/Granted day:2022-10-20
Information query
IPC分类: