Invention Grant
- Patent Title: Polymer layer in semiconductor device and method of manufacture
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Application No.: US17026667Application Date: 2020-09-21
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Publication No.: US11868047B2Publication Date: 2024-01-09
- Inventor: Sih-Hao Liao , Yu-Hsiang Hu , Hung-Jui Kuo , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/031
- IPC: G03F7/031 ; C08G73/10 ; G03F7/038 ; G03F7/039 ; H01L21/48 ; H01L23/31 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L25/18 ; H01L21/56
Abstract:
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.
Public/Granted literature
- US20220091505A1 Semiconductor Device and Method of Manufacture Public/Granted day:2022-03-24
Information query
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