- 专利标题： Method for enlarging tip portion of a fin-shaped structure
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申请号： US17367447申请日： 2021-07-05
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公开(公告)号： US11876095B2公开(公告)日： 2024-01-16
- 发明人: Chun-Hao Lin , Hsin-Yu Chen , Shou-Wei Hsieh
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN 1710655459.9 2017.08.03
- 分案原申请号： US15691703 2017.08.30
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L27/088 ; H01L21/8234 ; H01L21/308 ; H01L21/311 ; H01L27/02 ; H01L21/762 ; H01L29/06 ; H01L29/66 ; H01L21/84
摘要：
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.
公开/授权文献
- US20210335786A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2021-10-28
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