Invention Grant
- Patent Title: Method for enlarging tip portion of a fin-shaped structure
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Application No.: US17367447Application Date: 2021-07-05
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Publication No.: US11876095B2Publication Date: 2024-01-16
- Inventor: Chun-Hao Lin , Hsin-Yu Chen , Shou-Wei Hsieh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1710655459.9 2017.08.03
- The original application number of the division: US15691703 2017.08.30
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/088 ; H01L21/8234 ; H01L21/308 ; H01L21/311 ; H01L27/02 ; H01L21/762 ; H01L29/06 ; H01L29/66 ; H01L21/84
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.
Public/Granted literature
- US20210335786A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-10-28
Information query
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