Invention Grant
- Patent Title: Displays with silicon and semiconducting oxide thin-film transistors
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Application No.: US18155828Application Date: 2023-01-18
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Publication No.: US11876099B2Publication Date: 2024-01-16
- Inventor: Hiroshi Osawa , Kyung-Wook Kim , Ming-Chin Hung , Shih Chang Chang , Yu-Cheng Chen
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Treyz Law Group, P.C.
- Agent G. Victor Treyz; Joseph F. Guihan
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1362 ; G02F1/1368 ; H10K59/126 ; H10K59/121 ; G02F1/1345 ; H01L29/786

Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Public/Granted literature
- US20230154931A1 Displays With Silicon and Semiconducting Oxide Thin-Film Transistors Public/Granted day:2023-05-18
Information query
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