利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.016 秒)

    Display With Semiconducting Oxide and Polysilicon Transistors
    2.
    发明申请
    Display With Semiconducting Oxide and Polysilicon Transistors 有权
    显示与半导体氧化物和多晶硅晶体管

    公开(公告)号：US20160293643A1

    公开(公告)日：2016-10-06

    申请号：US14678819

    申请日：2015-04-03

    申请人： Apple Inc.

    发明人： Jungbae Kim ,  Kyung-Wook Kim ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Ton-Yong Wang

    IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/45 ,  G02F1/1345 ,  H01L29/66 ,  H01L21/265 ,  H01L29/49 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/32

    CPC分类号： H01L27/1248 ,  G02F1/13454 ,  G02F1/1362 ,  H01L21/26513 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869

    摘要： A display may have an array of pixels controlled by display driver circuitry. The pixels may have pixel circuits. In liquid crystal display configurations, each pixel circuit may have an electrode that applies electric fields to an associated portion of a liquid crystal layer. In organic light-emitting diode displays, each pixel circuit may have a drive transistor that applies current to an organic light-emitting diode in the pixel circuit. The pixel circuits and display driver circuitry may have thin-film transistor circuitry that includes transistor such as silicon transistors and semiconducting-oxide transistors. Semiconducting-oxide transistors and silicon transistors may be formed on a common substrate. Semiconducting-oxide transistors may have polysilicon layers with doped regions that serve as gates. Semiconducting-oxide channel regions overlap the gates. Transparent conductive oxide and metal may be used to form source-drain terminals that are coupled to opposing edges of the semiconducting oxide channel regions.

    摘要翻译： 显示器可以具有由显示驱动器电路控制的像素阵列。 像素可以具有像素电路。 在液晶显示结构中，每个像素电路可以具有向液晶层的相关部分施加电场的电极。 在有机发光二极管显示器中，每个像素电路可以具有将像素电路中的有机发光二极管施加电流的驱动晶体管。 像素电路和显示驱动器电路可以具有包括诸如硅晶体管和半导体氧化物晶体管的晶体管的薄膜晶体管电路。 半导体氧化物晶体管和硅晶体管可以形成在公共衬底上。 半导体氧化物晶体管可以具有用作栅极的掺杂区域的多晶硅层。 半导体氧化物沟道区域与栅极重叠。 可以使用透明导电氧化物和金属来形成耦合到半导体氧化物沟道区的相对边缘的源极 - 漏极端子。

    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors
    3.
    发明申请
    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors 有权
    具有氧化物薄膜晶体管的液晶显示器

    公开(公告)号：US20150055047A1

    公开(公告)日：2015-02-26

    申请号：US14228070

    申请日：2014-03-27

    申请人： Apple Inc.

    发明人： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Abbas Jamshidi Roudbari ,  Shang-Chih Lin ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

    IPC分类号： G02F1/1368

    CPC分类号： H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

    摘要： An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    摘要翻译： 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    Border masking structures for liquid crystal display
    6.
    发明授权
    Border masking structures for liquid crystal display 有权

    公开(公告)号：US09612492B2

    公开(公告)日：2017-04-04

    申请号：US14164026

    申请日：2014-01-24

    申请人： Apple Inc.

    发明人： Byung Duk Yang ,  Kyung-Wook Kim ,  Shih-Chang Chang ,  Hiroshi Osawa ,  Hirokazu Yamagata ,  Daisuke Nozu

    IPC分类号： G02F1/1362 ,  G02F1/1335

    CPC分类号： G02F1/136209 ,  G02F1/133512

    摘要： A display may have a thin-film transistor layer and color filter layer. The display may have an active area and an inactive border area. Light blocking structures in the inactive area may prevent stray backlight from a backlight light guide plate from leaking out of the display. The thin-film transistor layer may have a clear substrate, a patterned black masking layer on the clear substrate, a clear planarization layer on the black masking layer, and a layer of thin-film transistor circuitry on the clear planarization layer. The black masking layer may be formed from black photoimageable polyimide. The clear planarization layer may be formed from spin-on glass. The light blocking structures may include a first layer formed from a portion of the black masking layer and a second layer such as a layer of black tape on the underside of the color filter layer.

    Liquid crystal displays with oxide-based thin-film transistors
    7.
    发明授权
    Liquid crystal displays with oxide-based thin-film transistors 有权
    具有氧化物基薄膜晶体管的液晶显示器

    公开(公告)号：US09564478B2

    公开(公告)日：2017-02-07

    申请号：US14228070

    申请日：2014-03-27

    申请人： Apple Inc.

    发明人： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Abbas Jamshidi Roudbari ,  Shang-Chih Lin ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

    IPC分类号： G02F1/136 ,  G02F1/1345 ,  H01L27/32 ,  H01L27/12 ,  G09G3/36 ,  G02F1/1368 ,  G09G3/32 ,  G02F1/1362

    CPC分类号： H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

    摘要： An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    摘要翻译： 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    Electrostatic Discharge Protection Structures for Liquid Crystal Displays
    8.
    发明申请
    Electrostatic Discharge Protection Structures for Liquid Crystal Displays 有权
    液晶显示器静电放电保护结构

    公开(公告)号：US20150323843A1

    公开(公告)日：2015-11-12

    申请号：US14497204

    申请日：2014-09-25

    申请人： Apple Inc.

    发明人： Kwang Soon Park ,  Byung Duk Yang ,  Kyung-Wook Kim ,  Shih-Chang Chang ,  Yong Kwan Kim

    IPC分类号： G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335

    CPC分类号： G02F1/13439 ,  G02F1/133308 ,  G02F1/133514 ,  G02F1/136204 ,  G02F2001/133334

    摘要： A liquid crystal display having an outer layer such as a thin-film transistor layer and an inner layer such as a color filter layer may be mounted in a metal device housing. Transparent conductive coating material may be formed on display layers. The transparent conductive coating material may include a layer on the upper surface of the thin-film transistor layer, a layer on the lower surface of the color filter layer, and an edge coating that extends between the upper surface layer and lower surface layer. Electrostatic discharge protection structures for the display may include a conductive elastomeric gasket that couples the upper surface layer to an inner surface of the housing, a conductive tape that couples the lower surface layer to the inner surface, and a conductive material on the inner surface that contacts the edge coating.

    摘要翻译： 具有诸如薄膜晶体管层的外层和诸如滤色器层的内层的液晶显示器可以安装在金属器件外壳中。 透明导电涂层材料可以形成在显示层上。 透明导电涂层材料可以包括在薄膜晶体管层的上表面上的层，滤色器层的下表面上的层，以及在上表面层和下表面层之间延伸的边缘涂层。 用于显示器的静电放电保护结构可以包括将上表面层耦合到壳体的内表面的导电弹性垫片，将下表面层耦合到内表面的导电带和在内表面上的导电材料， 接触边缘涂层。

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors
    9.
    发明申请
    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors 有权

    公开(公告)号：US20210225890A1

    公开(公告)日：2021-07-22

    申请号：US17224305

    申请日：2021-04-07

    申请人： Apple Inc.

    发明人： Hiroshi Osawa ,  Kyung-Wook Kim ,  Ming-Chin Hung ,  Shih Chang Chang ,  Yu-Cheng Chen

    IPC分类号： H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

    摘要： An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Structure for pixelated self-capacitance
    10.
    发明授权
    Structure for pixelated self-capacitance 有权

    公开(公告)号：US10268295B2

    公开(公告)日：2019-04-23

    申请号：US15304494

    申请日：2014-10-01

    申请人： APPLE INC.

    发明人： Byung Duk Yang ,  Chun-Yao Huang ,  Kyung-Wook Kim ,  Shih-Chang Chang ,  Szuhsien Lee ,  Yong Kwan Kim

    IPC分类号： G06F3/044 ,  G06F3/041

    摘要： A touch screen having layers. The touch screen can include a substrate upon which the layers of the touch screen are disposed, and a touch region including a touch pixel electrode, a first display sub-pixel and a second display sub-pixel. The touch screen can also include a sense connection coupled to touch sensing circuitry. An intermediate connection can be disposed between the touch pixel electrode and the sense connection, and can be coupled to the sense connection at the first display sub-pixel and the touch pixel electrode at the second display sub-pixel. In some examples, the sense connection can be disposed at least partially underneath a structure in the first display sub-pixel, such as a data line. In some examples, the intermediate connection can be comprised of a same material type as a structure in the first display sub-pixel, such as a gate line material.