Invention Grant
- Patent Title: Three-dimensional memory device
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Application No.: US17569424Application Date: 2022-01-05
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Publication No.: US11894065B2Publication Date: 2024-02-06
- Inventor: Teng-Hao Yeh , Hang-Ting Lue , Tzu-Hsuan Hsu
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. PATENTS
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/10 ; G11C16/14 ; G11C16/16 ; G11C16/26

Abstract:
A three-dimensional memory device, such as 3D AND Flash memory device, includes a first page buffer, a second page buffer, a sense amplifier, a first path selector, and a second path selector. The first page buffer and the second page buffer are respectively configured to temporarily store a first write-in data and a second write-in data. The first path selector couples the sense amplifier or the first page buffer to a first global bit line according to a first control signal. The second path selector couples the sense amplifier or the second page buffer to a second global bit line according to a second control signal.
Public/Granted literature
- US20230215502A1 THREE-DIMENSIONAL MEMORY DEVICE Public/Granted day:2023-07-06
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