- 专利标题： Low warpage curing methodology by inducing curvature
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申请号： US17410958申请日： 2021-08-24
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公开(公告)号： US11929260B2公开(公告)日： 2024-03-12
- 发明人: Fang Jie Lim , Chin Wei Tan , Jun-Liang Su , Felix Deng , Sai Kumar Kodumuri , Ananthkrishna Jupudi , Nuno Yen-Chu Chen
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： MOSER TABOADA
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L21/67 ; H01L21/683 ; H01L23/00 ; H01L25/065
摘要：
Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.
公开/授权文献
- US20230061379A1 LOW WARPAGE CURING METHODOLOGY BY INDUCING CURVATURE 公开/授权日：2023-03-02
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