公开(公告)号：US11929260B2

公开(公告)日：2024-03-12

申请号：US17410958

申请日：2021-08-24

Applicant: Applied Materials, Inc.

Inventor： Fang Jie Lim ,  Chin Wei Tan ,  Jun-Liang Su ,  Felix Deng ,  Sai Kumar Kodumuri ,  Ananthkrishna Jupudi ,  Nuno Yen-Chu Chen

IPC: H01L21/56 ,  H01L21/67 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L21/56 ,  H01L21/563 ,  H01L21/67109 ,  H01L21/67115 ,  H01L24/75 ,  H01L24/83 ,  H01L21/6838 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/73204 ,  H01L2224/75272 ,  H01L2224/7555 ,  H01L2224/75744 ,  H01L2224/75985 ,  H01L2224/75986 ,  H01L2224/83047 ,  H01L2224/83048 ,  H01L2224/8322 ,  H01L2224/8385 ,  H01L2224/83908 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

公开(公告)号：US11881436B2

公开(公告)日：2024-01-23

申请号：US17369519

申请日：2021-07-07

Applicant: Applied Materials, Inc.

Inventor： Jun-Liang Su ,  Chin Wei Tan ,  Fang Jie Lim

IPC: H01L21/66 ,  G01B9/02

CPC classification number: H01L22/20 ,  G01B9/02049

Abstract: Methods and apparatus for processing a substrate are provided. For example, metrology apparatus configured for use with a substrate processing platform comprise an interferometer configured to obtain a first set of measurements at a first set of points along a surface of a substrate, a sensor configured to obtain a second set of measurements at a second set of points different from the first set of points along the surface of the substrate, an actuator configured to position the interferometer and the sensor at various positions along a measurement plane parallel to the surface of the substrate for obtaining the first set of measurements and the second set of measurements, and a substrate support comprising a substrate support surface for supporting the substrate beneath the measurement plane while obtaining the first set of measurements and the second set of measurements.

公开(公告)号：US11871667B2

公开(公告)日：2024-01-09

申请号：US17023999

申请日：2020-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Puay Han Tan ,  Karrthik Parathithasan ,  Jun-Liang Su ,  Fang Jie Lim ,  Chin Wei Tan ,  Wei Jie Dickson Teo

IPC: H10N10/17 ,  H01L23/00 ,  H05K1/02

CPC classification number: H10N10/17 ,  H01L23/562 ,  H05K1/0271

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

公开(公告)号：US11177146B2

公开(公告)日：2021-11-16

申请号：US16670138

申请日：2019-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Qi Jie Peng ,  Chin Wei Tan ,  Jun-Liang Su ,  Fang Jie Lim ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Puay Han Tan

IPC: H01L21/62 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

公开(公告)号：US20210134627A1

公开(公告)日：2021-05-06

申请号：US16670138

申请日：2019-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Qi Jie Peng ,  Chin Wei Tan ,  Jun-Liang Su ,  Fang Jie Lim ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Puay Han Tan

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.