Invention Grant
- Patent Title: Transparent top electrode composite film for organic optoelectronic devices and its preparation method
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Application No.: US17566600Application Date: 2021-12-30
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Publication No.: US11930649B2Publication Date: 2024-03-12
- Inventor: Deen Gu , Xin Zhou , Yadong Jiang , Mengru Chen
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Sichuan
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Sichuan
- Priority: CN 2110987133.2 2021.08.26
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H10K30/82 ; H10K50/805 ; H10K71/60 ; H10K102/10

Abstract:
A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOx film layer coated on the substrate, a doped Ag-based film layer coated on the MoOx film layer and an HfOx film layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOx film layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOx film layer through sputtering process or evaporation process; and (C) depositing an HfOx film layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.
Public/Granted literature
- US20220123243A1 Transparent top electrode composite film for organic optoelectronic devices and its preparation method Public/Granted day:2022-04-21
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