公开(公告)号：US11930649B2

公开(公告)日：2024-03-12

申请号：US17566600

申请日：2021-12-30

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Xin Zhou ,  Yadong Jiang ,  Mengru Chen

IPC: H01L23/00 ,  H10K30/82 ,  H10K50/805 ,  H10K71/60 ,  H10K102/10

CPC classification number: H10K30/82 ,  H10K50/805 ,  H10K71/60 ,  H10K2102/101

Abstract: A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOx film layer coated on the substrate, a doped Ag-based film layer coated on the MoOx film layer and an HfOx film layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOx film layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOx film layer through sputtering process or evaporation process; and (C) depositing an HfOx film layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.

公开(公告)号：US20220123243A1

公开(公告)日：2022-04-21

申请号：US17566600

申请日：2021-12-30

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Xin Zhou ,  Yadong Jiang ,  Mengru Chen

IPC: H01L51/44 ,  H01L51/52 ,  H01L51/00

Abstract: A transparent top electrode composite film for organic optoelectronic devices includes a substrate, an MoOx film layer coated on the substrate, a doped Ag-based film layer coated on the MoOx film layer and an HfOx film layer coated on the doped Ag-based film layer. A preparation method of the transparent top electrode composite film, which is achieved under vacuum and low temperature, includes steps of (A) depositing an MoOx film layer on a substrate through thermal evaporation process or electron beam evaporation process without heating the substrate; (B) depositing a doped Ag-based film layer on the MoOx film layer through sputtering process or evaporation process; and (C) depositing an HfOx film layer on the doped Ag-based film layer through reactive sputtering process, thereby obtaining the transparent top electrode composite film. The composite film is able to be used as a top electrode material for organic optoelectronic devices.