Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17475482Application Date: 2021-09-15
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Publication No.: US11942176B2Publication Date: 2024-03-26
- Inventor: Tomoya Sanuki , Xu Li , Masayuki Miura , Takayuki Miyazaki , Toshio Fujisawa , Hiroto Nakai , Hideko Mukaida , Mie Matsuo
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21044868 2021.03.18
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C5/14 ; G11C16/30 ; H02M3/158 ; H10B41/27 ; H10B43/27

Abstract:
A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.
Public/Granted literature
- US20220301599A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-09-22
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