公开(公告)号：US11942176B2

公开(公告)日：2024-03-26

申请号：US17475482

申请日：2021-09-15

Applicant: Kioxia Corporation

Inventor： Tomoya Sanuki ,  Xu Li ,  Masayuki Miura ,  Takayuki Miyazaki ,  Toshio Fujisawa ,  Hiroto Nakai ,  Hideko Mukaida ,  Mie Matsuo

IPC: G11C5/00 ,  G11C5/14 ,  G11C16/30 ,  H02M3/158 ,  H10B41/27 ,  H10B43/27

CPC classification number: G11C5/14 ,  G11C16/30 ,  H02M3/1582 ,  H10B41/27 ,  H10B43/27

Abstract: A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.