Invention Grant
- Patent Title: Protective layer over FinFET and method of forming same
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Application No.: US17462818Application Date: 2021-08-31
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Publication No.: US11948840B2Publication Date: 2024-04-02
- Inventor: Hung-Yao Chen , Pin-Chu Liang , Hsueh-Chang Sung , Pei-Ren Jeng , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L27/092

Abstract:
In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.
Public/Granted literature
- US20230064844A1 Semiconductor Device and Methods of Manufacturing Public/Granted day:2023-03-02
Information query
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