- 专利标题： Three dimensional memory
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申请号： US17678971申请日： 2022-02-23
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公开(公告)号： US11949022B2公开(公告)日： 2024-04-02
- 发明人: Zhenyu Lu , Hongbin Zhu , Gordon A. Haller , Roger W. Lindsay , Andrew Bicksler , Brian J. Cleereman , Minsoo Lee
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 分案原申请号： US16845793 2020.04.10
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/285 ; H01L23/535 ; H01L27/11524 ; H01L27/11556 ; H01L27/1157 ; H01L27/11582 ; H01L29/66 ; H01L29/792 ; H10B41/27 ; H10B41/35 ; H10B43/27 ; H10B43/35
摘要：
A method to fabricate a three dimensional memory structure may include creating a stack of layers including a conductive source layer, a first insulating layer, a select gate source layer, and a second insulating layer, and an array stack. A hole through the stack of layers may then be created using the conductive source layer as a stop-etch layer. The source material may have an etch rate no faster than 33% as fast as an etch rate of the insulating material for the etch process used to create the hole. A pillar of semiconductor material may then fill the hole, so that the pillar of semiconductor material is in electrical contact with the conductive source layer.
公开/授权文献
- US20220181483A1 Three Dimensional Memory 公开/授权日：2022-06-09
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