- 专利标题： High voltage polysilicon gate in high-K metal gate device
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申请号： US18079971申请日： 2022-12-13
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公开(公告)号： US11950413B2公开(公告)日： 2024-04-02
- 发明人: Meng-Han Lin , Te-Hsin Chiu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Eschweiler & Potashnik, LLC
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/265 ; H01L21/28 ; H01L21/321 ; H01L21/3213 ; H01L27/02 ; H01L29/08 ; H01L29/423 ; H01L29/49 ; H10B41/40
摘要：
An integrated circuit device includes a plurality of metal gates each having a metal electrode and a high-κ dielectric and a plurality of polysilicon gates each having a polysilicon electrode and conventional (non high-κ) dielectrics. The polysilicon gates may have adaptations for operation as high voltage gates including thick dielectric layers and area greater than one μm2. Polysilicon gates with these adaptations may be operative with gate voltages of 10 V or higher and may be used in embedded memory devices.
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