- 专利标题： Magnetic tunnel junction (MTJ) device and forming method thereof
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申请号： US18073574申请日： 2022-12-02
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公开(公告)号： US11950431B2公开(公告)日： 2024-04-02
- 发明人: Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN 1910030827.X 2019.01.14
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; G11C11/16 ; H01F10/32 ; H01F41/34 ; H01L23/552 ; H10B61/00 ; H10N50/01 ; H10N50/80 ; H10N50/85
摘要：
A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
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