Invention Grant
- Patent Title: Substrate processing method and substrate processing system
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Application No.: US17298332Application Date: 2019-07-12
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Publication No.: US11955337B2Publication Date: 2024-04-09
- Inventor: Toru Hisamatsu , Takayuki Katsunuma , Shinya Ishikawa , Yoshihide Kihara , Masanobu Honda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- Priority: JP 18225894 2018.11.30
- International Application: PCT/JP2019/027722 2019.07.12
- International Announcement: WO2020/110363A 2020.06.04
- Date entered country: 2021-05-28
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/311 ; C23C16/04
Abstract:
A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.
Public/Granted literature
- US20220115235A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM Public/Granted day:2022-04-14
Information query
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