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公开(公告)号：US10854430B2
公开(公告)日：2020-12-01
申请号：US15825308
申请日：2017-11-29
发明人： Takayuki Katsunuma
摘要： In a plasma etching method, a deposit containing an element forming an upper electrode is deposited on a metal-containing mask having a predetermined pattern while sputtering the upper electrode by a plasma of a first processing gas. Then, an etching target film is etched by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.
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公开(公告)号：US09899232B2
公开(公告)日：2018-02-20
申请号：US15183976
申请日：2016-06-16
发明人： Takayuki Katsunuma
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/3065
CPC分类号： H01L21/31144 , H01J2237/334 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , H01L21/31116
摘要： Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.
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公开(公告)号：US20140197135A1
公开(公告)日：2014-07-17
申请号：US14154385
申请日：2014-01-14
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32477
摘要： A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.
摘要翻译： 等离子体处理方法包括在设置在室内的构件的表面上形成氧化硅膜，其中含有含硅气体的等离子体不含氧，同时将该构件的温度控制在低于另一构件的温度; 在所述构件的表面上形成所述氧化硅膜之后，利用处理气体的等离子体对装载到所述室中的目标物体进行等离子体处理; 并且在执行等离子体处理的目标物体之后，用含氟气体的等离子体从构件的表面去除氧化硅膜被卸载到室外。
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4.发明授权公开(公告)号：US08703002B2
公开(公告)日：2014-04-22
申请号：US13737313
申请日：2013-01-09
发明人： Tatsuo Matsudo , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。
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公开(公告)号：US11637003B2
公开(公告)日：2023-04-25
申请号：US17094861
申请日：2020-11-11
IPC分类号： H01L21/3065 , H01J37/32
摘要： A method for etching a film includes: supplying a precursor gas to the substrate, thereby forming a precursor layer on a substrate; and etching the film with a chemical species from plasma formed from a processing gas so as to increase a depth of the opening, and form a protective region from the precursor layer with the chemical species or another chemical species from the plasma. A plurality of cycles each including the supplying the precursor gas and the etching the film is executed. A temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles and a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles are set to be different from each other.
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公开(公告)号：US10541147B2
公开(公告)日：2020-01-21
申请号：US15202356
申请日：2016-07-05
IPC分类号： H01L21/02 , H01L21/306 , H01L21/3213 , H01L21/311 , H01L21/768
摘要： A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
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公开(公告)号：US09330930B2
公开(公告)日：2016-05-03
申请号：US14615725
申请日：2015-02-06
IPC分类号： H01L21/302 , H01L21/3065 , H01J37/32 , H01L21/311 , H01L21/768 , H01L21/66 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.
摘要翻译： 蚀刻基板的等离子体蚀刻方法包括调整包含在等离子体中的活性种的浓度分布的调整步骤。 调整步骤根据供给蚀刻气体的基板上的供给区域是否对应于供给的蚀刻气体的扩散效果大于所供给的蚀刻气体的流动的影响的区域，调整蚀刻气体的供给量 提供的蚀刻气体或所供给的蚀刻气体的流动效应大于所供给的蚀刻气体的扩散效果的区域。
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公开(公告)号：US20150243522A1
公开(公告)日：2015-08-27
申请号：US14626022
申请日：2015-02-19
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31116 , C23C2/006 , H01J37/32091 , H01L21/02164 , H01L21/0217 , H01L21/31055 , H01L21/311 , H01L21/76897
摘要： An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. Further, in the method, the process (a) and the process (b) are alternately repeated.
摘要翻译： 蚀刻方法可以蚀刻由氧化硅形成的区域。 蚀刻方法包括将包含由氧化硅形成的区域的目标物体暴露于含有碳氟化合物气体的处理气体的等离子体，蚀刻该区域以及在该区域上形成含有碳氟化合物的沉积物的曝光处理（工序（a）） ; 以及用沉积物中所含的碳氟化合物的基团蚀刻该区域的蚀刻工艺（工艺（b））。 此外，在该方法中，交替重复方法（a）和方法（b）。
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公开(公告)号：US20140234992A1
公开(公告)日：2014-08-21
申请号：US14346986
申请日：2012-09-25
IPC分类号： H01L21/66 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.
摘要翻译： 提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度 放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。 等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布 在等离子体产生单元产生的等离子体中，在衬底上方的空间内。
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公开(公告)号：US11501975B2
公开(公告)日：2022-11-15
申请号：US17133974
申请日：2020-12-24
IPC分类号： H01L21/311 , H01J37/32 , H01L21/67
摘要： A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.
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