- 专利标题: Readout architectures for binned indirect time-of-flight sensors
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申请号: US17517971申请日: 2021-11-03
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公开(公告)号: US11985437B2公开(公告)日: 2024-05-14
- 发明人: Andreas Suess , Zheng Yang
- 申请人: OMNIVISION TECHNOLOGIES, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: OmniVision Technologies, Inc.
- 当前专利权人: OmniVision Technologies, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Perkins Coie LLP
- 主分类号: H04N25/46
- IPC分类号: H04N25/46 ; G01S7/481 ; G01S17/894 ; H04N25/44 ; H04N25/441 ; H04N25/705 ; H04N25/75
摘要:
A time-of-flight pixel array includes photodiodes that generate charge in response to incident reflected modulated light. First transfer transistors transfer a first portion of the charge from the photodiodes in response to a first modulation signal and second transfer transistors transfer a second portion of the charge from the photodiodes in response to a second modulation signal, which is an inverted first modulation signal. First floating diffusions are coupled to the first transfer transistors. A binning transistor is coupled between one of the first floating diffusions and another one of the first floating diffusions. A first memory node is coupled to one of the first floating diffusions through a first sample and hold transistor and a second memory node is coupled to another one of the first floating diffusions through a second sample and hold transistor.
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