- 专利标题: Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
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申请号: US17711691申请日: 2022-04-01
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公开(公告)号: US11987901B2公开(公告)日: 2024-05-21
- 发明人: Pietro Valcozzena , Maria Porrini , Januscia Duchini
- 申请人: GlobalWafers Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: GlobalWafers Co., Ltd.
- 当前专利权人: GlobalWafers Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Armstrong Teasdale LLP
- 分案原申请号: US17125590 2020.12.17
- 主分类号: C30B29/06
- IPC分类号: C30B29/06 ; C30B15/00 ; C30B15/04 ; C30B15/14 ; C30B15/20 ; C30B29/66 ; C30B25/10 ; C30B25/20
摘要:
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.
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