Invention Grant
- Patent Title: Memory device including interface circuit and method of operating the same
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Application No.: US17867008Application Date: 2022-07-18
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Publication No.: US12008268B2Publication Date: 2024-06-11
- Inventor: Daehoon Na , Jeongdon Ihm , Jangwoo Lee , Byunghoon Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190123961 2019.10.07
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F1/06 ; G11C16/10 ; G11C16/26 ; G11C16/32 ; G11C16/04

Abstract:
A memory system includes a memory device including a plurality of non-volatile memories and an interface circuit connected to each of the plurality of non-volatile memories, and a memory controller connected to the interface circuit and configured to transmit/receive data according to a first clock, wherein the interface circuit is configured to divide the first clock into a second clock, according to the number of the plurality of non-volatile memories, and transmit/receive data to/from each of the plurality of non-volatile memories, according to the second clock.
Public/Granted literature
- US20220350541A1 MEMORY DEVICE INCLUDING INTERFACE CIRCUIT AND METHOD OF OPERATING THE SAME Public/Granted day:2022-11-03
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