- 专利标题： Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor
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申请号： US17521017申请日： 2021-11-08
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公开(公告)号： US12029137B2公开(公告)日： 2024-07-02
- 发明人: Sumio Ikegawa
- 申请人： EVERSPIN TECHNOLOGIES, INC.
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 代理机构： Bookoff McAndrews, PLLC
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; G11C11/16 ; H01F10/32 ; H01F41/32 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
摘要：
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
公开/授权文献
- US20220059755A1 MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR 公开/授权日：2022-02-24
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