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公开(公告)号：US11127896B2
公开(公告)日：2021-09-21
申请号：US16251230
申请日：2019-01-18
Applicant: Everspin Technologies, Inc.
Inventor： Syed M. Alam , Thomas Andre , Frederick Mancoff , Sumio Ikegawa
Abstract: The present disclosure is drawn to, among other things, a magnetoresistive memory. The magnetoresistive memory comprises a plurality of magnetoresistive memory devices, wherein each magnetoresistive memory device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed in between the fixed and free magnetic regions. The magnetoresistive memory further comprises a first conductor extending adjacent each magnetoresistive memory device of the plurality of magnetoresistive devices, wherein the first conductor is in electrical contact with the free magnetic region of each magnetoresistive memory device.
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公开(公告)号：US10825500B2
公开(公告)日：2020-11-03
申请号：US16286793
申请日：2019-02-27
Applicant: Everspin Technologies, Inc.
Inventor： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US20180182443A1
公开(公告)日：2018-06-28
申请号：US15851816
申请日：2017-12-22
Applicant: Everspin Technologies, Inc.
Inventor： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/5607 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US12167702B2
公开(公告)日：2024-12-10
申请号：US18123729
申请日：2023-03-20
Applicant: Everspin Technologies, Inc.
Inventor： Sumio Ikegawa , Han Kyu Lee , Sanjeev Aggarwal , Jijun Sun , Syed M. Alam , Thomas Andre
Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.
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公开(公告)号：US10659081B2
公开(公告)日：2020-05-19
申请号：US15846242
申请日：2017-12-19
Applicant: Everspin Technologies Inc.
Inventor： Sumio Ikegawa , Jon Slaughter
Abstract: Techniques for recovering preprogrammed data from non-volatile memory are provided that include majority voting and/or use of one or more levels of ECC correction. Embodiments include storage of multiple copies of the data where ECC correction is performed before and after majority voting with respect to the multiple copies. Multiple levels of ECC correction can also be performed where one level of ECC is performed at the local level (e.g. on-chip), whereas another level of ECC correction is performed at a system level.
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Patent Agency Ranking
公开(公告)号：US11637235B2
公开(公告)日：2023-04-25
申请号：US16744963
申请日：2020-01-16
Applicant: Everspin Technologies, Inc.
Inventor： Sumio Ikegawa , Han Kyu Lee , Sanjeev Aggarwal , Jijun Sun , Syed M. Alam , Thomas Andre
Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.
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公开(公告)号：US11189781B2
公开(公告)日：2021-11-30
申请号：US16029938
申请日：2018-07-09
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Sumio Ikegawa
Abstract: A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
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公开(公告)号：US10255961B2
公开(公告)日：2019-04-09
申请号：US15851816
申请日：2017-12-22
Applicant: Everspin Technologies, Inc.
Inventor： Han-Jong Chia , Sumio Ikegawa , Michael Tran , Jon Slaughter
Abstract: A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.
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公开(公告)号：US20180205396A1
公开(公告)日：2018-07-19
申请号：US15846242
申请日：2017-12-19
Applicant: Everspin Technologies Inc.
Inventor： Sumio Ikegawa , Jon Slaughter
CPC classification number: H03M13/2906 , G06F11/1048 , G06F11/1068 , G06F11/167 , G11C29/52
Abstract: Techniques for recovering preprogrammed data from non-volatile memory are provided that include majority voting and/or use of one or more levels of ECC correction. Embodiments include storage of multiple copies of the data where ECC correction is performed before and after majority voting with respect to the multiple copies. Multiple levels of ECC correction can also be performed where one level of ECC is performed at the local level (e.g. on-chip), whereas another level of ECC correction is performed at a system level.
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公开(公告)号：US12029137B2
公开(公告)日：2024-07-02
申请号：US17521017
申请日：2021-11-08
Applicant: EVERSPIN TECHNOLOGIES, INC.
Inventor： Sumio Ikegawa
CPC classification number: H10N50/80 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F41/32 , H10N50/01 , H10N50/10 , H10N50/85
Abstract: A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
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